Current Status of GaN-Based Solid-State Lighting

被引：183
|
作者：
Nakamura, Shuji [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
MRS BULLETIN | 2009年 / 34卷 / 02期
基金：
日本科学技术振兴机构;
关键词：
INGAN/GAN LASER-DIODES; EMITTING-DIODES; PLANE GAN;
D O I：
10.1557/mrs2009.28
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The continuous improvement in luminous efficacy of white light-emitting-diode (LED) sources offers the potential of considerable energy savings in general lighting applications. Recent experiments at UCSB have demonstrated 117 lumens per watt (m/W) in white LEDs, with further improvements expected in the near future. Considerable progress has also been achieved using nonpolar GaN, such as a-plane {1120} and m-plane {1100} GaN, or semipolar GaN substrates. Such devices avoid the deleterious effects of charge separation due to spontaneous and piezoelectric polarization inherent in most c-axis oriented devices.
引用
收藏
页码：101 / 107
页数：7
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