Status of GaN/SiC-based LEDs and their application in solid state lighting

被引：14
|
作者：
Kong, Hua-Shuang [1 ]
Ibbetson, James [1 ]
Edmond, John [1 ]
机构：
[1] Cree Inc, Durham, NC 27703 USA
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期
关键词：
LED; GaN; SiC; solid-state lighting;
D O I：
10.1002/pssc.201300458
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
With the advances in light-emitting diodes (LED) efficiency over the last several years, solid-state lighting in the marketplace has grown significantly. This includes outdoor full colour displays, street and parking deck lighting, indoor lighting and hand held devices. In each application, there is an optimization between the LED chips, the components they are encapsulated into and the lighting systems made from these components. In this paper, the latest developments in GaN/SiC chip design, and the most recent white LED component efficacy will be discussed. Recent and predicted lighting system efficiency in the near future will also be presented. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：621 / 623
页数：3
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