A Novel GaN-Based Solid-State Circuit Breaker With Voltage Overshoot Suppression

被引:15
|
作者
Mejia-Ruiz, Gabriel E. [1 ]
Arrieta Paternina, Mario Roberto [1 ]
Zamora-Mendez, Alejandro [2 ]
Rosas-Caro, Julio C. [3 ]
Bolivar-Ortiz, Guillermo [4 ]
机构
[1] Univ Nacl Autonoma Mexico, Dept Elect Engn, Mexico City 04510, DF, Mexico
[2] Michoacan State Univ, Elect Engn Fac, Morelia 58030, Michoacan, Mexico
[3] Univ Panamer, Zapopan 45010, Mexico
[4] Corp Univ Minuto Dios UNIMINUTO, Engn Fac, Bello 051051, Colombia
关键词
Snubbers; Switches; Surges; Silicon carbide; Voltage; Fault currents; Microgrids; Gallium nitride (GaN) FETs; overcurrent protection; short-circuit protection; snubber circuit; solid-state circuit breaker (SSCB); voltage overshoot suppression; SNUBBER CIRCUIT; DESIGN; IGCT; KV;
D O I
10.1109/TIE.2021.3116557
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This article proposes a novel ultra-fast self-powered bidirectional solid-state circuit breaker (SSCB) with voltage overshoot suppression that uses gallium nitride switches with very low conduction losses. This SSCB can be used in low and medium ac/dc networks for both short-circuit protection and overcurrent protection. An exhaustive methodology for RCD snubber design applied to SSCBs is provided. A comprehensive review of the technical literature is presented exhibiting that the proposed SSCB reduces conduction losses and detection time in comparison with other similar SSCBs. The performance features of the proposed SSCB are verified through the functional tests that are carried out employing a hardware-implemented prototype. Experimental results confirm that our proposal is able to detect and process the short-circuit failure in 282 ns; the authors have not found any faster results in the literature.
引用
收藏
页码:8949 / 8960
页数:12
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