Infrared absorption by pairs of group III and V impurities in silicon

被引：2

作者：

Pokrovskii, YE ^{[1
]}

Smirnova, OI ^{[1
]}

Khval'kovskii, NA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radioengn & Elect, Moscow 1011999, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 2002年 / 95卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

Absorption - Band structure - Charge carriers - Impurities - Infrared radiation - Phase transitions - Semiconductor doping - Silicon;

D O I：

10.1134/1.1499905

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Infrared absorption bands, shifted to regions of lower energies relative to narrow lines of transitions of impurities to excited states, are investigated in silicon doped with group III and V impurities in concentrations above 10(16) cm(-3). It is found that the band structure is peculiar to each of the investigated impurities but independent of their concentrations, and the absorption coefficients in the bands increase approximately quadratically with concentration. This leads one to infer that the bands are caused by the excitation of charge carriers bound on impurity pairs localized within several Bohr radii. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：83 / 86

页数：4

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