'Electronic structure of Sn and Ge impurities in group III-V semiconductors'

被引:0
|
作者
机构
来源
| 1600年 / Publ by ISVA, Lyngby, Den卷
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Electronic structure and exchange coupling of Mn impurities in III-V semiconductors
    Schulthess, TC
    Temmerman, WM
    Szotek, Z
    Butler, WH
    Stocks, GM
    NATURE MATERIALS, 2005, 4 (11) : 838 - 844
  • [2] Electronic structure of III-V nitride semiconductors
    Aourag, H
    Certier, M
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1998, 59 (6-7) : 1145 - 1156
  • [3] Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors
    Kim, Jiseok
    Fischetti, Massimo V.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (01)
  • [4] ELECTRONIC-STRUCTURE OF III-V TERNARY SEMICONDUCTORS
    GERA, VB
    GUPTA, R
    JAIN, KP
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1989, 1 (30) : 4913 - 4930
  • [5] Behavior of nitrogen impurities in III-V semiconductors
    Zhang, Y
    Ge, WK
    JOURNAL OF LUMINESCENCE, 2000, 85 (04) : 247 - 260
  • [6] THE ELECTRONIC CONFIGURATION OF AMPHOTERIC SN DOPANTS IN III-V COMPOUND SEMICONDUCTORS
    WEYER, G
    PETERSEN, JW
    DAMGAARD, S
    PHYSICA B & C, 1983, 116 (1-3): : 470 - 473
  • [7] Dipole modification of the surface electronic structure of III-V semiconductors
    Lebedev, Mikhail V.
    Savchenko, Grigory M.
    Averkiev, Nikita S.
    SOLID STATE COMMUNICATIONS, 2024, 384
  • [8] A THEORETICAL INVESTIGATION OF THE ELECTRONIC-STRUCTURE OF III-V SEMICONDUCTORS
    CASARIN, M
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1989, 197 : 40 - INOR
  • [9] Memory effect of Ge in III-V semiconductors
    Welser, E.
    Guter, W.
    Wekkeli, A.
    Dimroth, F.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4799 - 4802
  • [10] Band parameters of group III-V semiconductors in wurtzite structure
    Ziembicki, Jakub
    Scharoch, Pawel
    Polak, Maciej P.
    Wisniewski, Michal
    Kudrawiec, Robert
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (22)