Optical orientation of electron and nuclear spins in strain free GaAs quantum dots grown by droplet epitaxy

被引：0

作者：

Belhadj, Thomas ^{[1
]}

Kuroda, Takashi ^{[1
,2
]}

Simon, Claire-Marie ^{[1
]}

Amand, Thierry ^{[1
]}

Mano, Takaaki ^{[2
]}

Sakoda, Kazuaki ^{[2
]}

Koguchi, Nobuyuki ^{[2
]}

Marie, Xavier ^{[1
]}

Urbaszek, Bernhard ^{[1
]}

机构：

[1] Univ Toulouse, LPCNO, INSA, CNRS,UPS, F-31077 Toulouse 4, France

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 04期

关键词：

RELAXATION; NMR;

D O I：

10.1002/pssb.200880576

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report optical orientation experiments in individual, strain, free GaAs quantum dots in AlGaAs grown by modified droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization. of. the resulting photoluminescence at 4 K. Optical injection of spin polarized electrons into the dot gives rise to dynamical nuclear polarization that considerably changes the exciton Zeeman splitting (Overhauser shift). We show that the created nuclear polarization is bistable and present a direct measurement of the build up time of the nuclear polarization in a single GaAs dot in the order of a second. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：762 / 765

页数：4

共 50 条

[41] Optical and structural properties of InGaSb/GaAs quantum dots grown by molecular beam epitaxy
Hodgson, P. D.
Bentley, M.
Delli, E.
Beanland, R.
Wagener, M. C.
Botha, J. R.
Carrington, P. J.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2018, 33 (12)
[42] Optical orientation of electron spins in GaAs quantum wells -: art. no. 165305
Pfalz, S
Winkler, R
Nowitzki, T
Reuter, D
Wieck, AD
Hägele, D
Oestreich, M
PHYSICAL REVIEW B, 2005, 71 (16):
[43] Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
Sergio Bietti
Luca Esposito
Alexey Fedorov
Andrea Ballabio
Andrea Martinelli
Stefano Sanguinetti
Nanoscale Research Letters, 2015, 10
[44] Single-dot spectroscopy of low density GaAs quantum dots grown by modified droplet epitaxy
Yamagiwa, M
Minami, F
Koguchi, N
NSTI NANOTECH 2004, VOL 3, TECHNICAL PROCEEDINGS, 2004, : 445 - 447
[45] Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
Bietti, Sergio
Esposito, Luca
Fedorov, Alexey
Ballabio, Andrea
Martinelli, Andrea
Sanguinetti, Stefano
NANOSCALE RESEARCH LETTERS, 2015, 10 : 1 - 7
[46] Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
Jo, Masafumi
Mano, Takaaki
Sakoda, Kazuaki
JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)
[47] Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy
Wu, Jiang
Shao, Dali
Dorogan, Vitaliy G.
Li, Alvason Z.
Li, Shibin
DeCuir, Eric A., Jr.
Manasreh, M. Omar
Wang, Zhiming M.
Mazur, Yuriy I.
Salamo, Gregory J.
NANO LETTERS, 2010, 10 (04) : 1512 - 1516
[48] Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy
Jo, Masafumi
Mano, Takaaki
Sakoda, Kazuaki
APPLIED PHYSICS EXPRESS, 2010, 3 (04)
[49] Unstrained GaAs quantum dashes grown on GaAs(001) substrates by droplet epitaxy
Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
不详
Appl. Phys. Express, 4
[50] Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous droplet epitaxy with post-growth annealing
Lee, CM
Noh, SK
Lee, JI
Lee, DH
Leem, JY
Han, IK
Mano, T
Koguchi, N
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (05) : L579 - L582

← 1 2 3 4 5 →