Unstrained GaAs Quantum Dashes Grown on GaAs(001) Substrates by Droplet Epitaxy

被引：25
|
作者：
Jo, Masafumi [1 ]
Mano, Takaaki [1 ]
Sakoda, Kazuaki [1 ,2 ]
机构：
[1] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050047, Japan
[2] Univ Tsukuba, Grad Sch Pure & Appl Sci, Tsukuba, Ibaraki 3058577, Japan
来源：
APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 04期
基金：
日本学术振兴会;
关键词：
MOLECULAR-BEAM EPITAXY; SHAPE TRANSITION; WIRES; ISLANDS; SURFACE; DOTS; SPECTROSCOPY; LASERS;
D O I：
10.1143/APEX.3.045502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the formation of GaAs quantum dashes on GaAs(001) substrates using droplet epitaxy. Isotropic GaAs quantum dots at low temperature become elongated as the uncapped annealing temperature increases, resulting in GaAs quantum dashes. Emission from the dots (dashes) shows a large blueshift as a result of reduced dot height. In addition, the intensity of emission significantly increases as a result of improved crystalline quality induced by the thermal treatment. The effects of structural anisotropy of the quantum dashes are studied in terms of polarized emission. (C) 2010 The Japan Society of Applied Physics
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