Instabilities in Silicon Power Devices A Review of Failure Mechanisms in Modern Power Devices

被引：35

作者：

Iannuzzo, Francesco ^{[1
]}

Abbate, Carmine ^{[2
]}

Busatto, Giovanni ^{[1
,3
,4
,5
]}

机构：

[1] Univ Cassino & Southern Lazio, Cassino, Italy

[2] Univ Cassino & Southern Lazio, LEI, Cassino, Italy

[3] CNR, Ist Ric Elettromagnetismo & Componenti Elettron, Bologna, Italy

[4] Univ Naples Federico II, I-80138 Naples, Italy

[5] Univ Cassino, Cassino, Italy

来源：

IEEE INDUSTRIAL ELECTRONICS MAGAZINE | 2014年 / 8卷 / 03期

关键词：

DYNAMIC AVALANCHE; REVERSE RECOVERY; PIN DIODE; TURN-OFF; MOSFETS; IGBTS; TRANSISTORS; CAPACITANCE; FILAMENTS;

D O I：

10.1109/MIE.2014.2305758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power systems. Today, electronic power systems cover nearly the full voltage range (from volts to megavolts) and almost the full power range, if we exclude gigawatt-rated power plants. The applications include: © 2007-2011 IEEE.

引用

页码：28 / 39

页数：12

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