Voids in silicon power devices

被引：0
|
作者：
CNR-IMETEM, Catania, Italy [1 ]
机构：
来源：
Solid State Electron | / 12卷 / 2295-2301期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Voids in silicon power devices
    Raineri, V
    Saggio, M
    Frisina, F
    Rimini, E
    SOLID-STATE ELECTRONICS, 1998, 42 (12) : 2295 - 2301
  • [2] Localized lifetime control in silicon bipolar power devices by voids induced by He ion implantation
    Saggio, M
    Raineri, V
    Frisina, F
    Rimini, E
    POWER SEMICONDUCTOR MATERIALS AND DEVICES, 1998, 483 : 45 - 50
  • [3] Lifetime control in silicon devices by voids induced by He ion implantation
    J Appl Phys, 12 (9012):
  • [4] Lifetime control in silicon devices by voids induced by He ion implantation
    Raineri, V
    Fallica, G
    Libertino, S
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (12) : 9012 - 9016
  • [5] Thermal impact of solder voids in the electronic packaging of power devices
    Zhu, NH
    FIFTEENTH ANNUAL IEEE SEMICONDUCTOR THERMAL MEASUREMENT AND MANAGEMENT SYMPOSIUM, 1999, : 22 - 29
  • [6] Silicon carbide for power devices
    Palmour, JW
    Singh, R
    Glass, RC
    Kordina, O
    Carter, CH
    ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS, 1997, : 25 - 32
  • [7] SILICON EPITAXY FOR POWER DEVICES
    ROY, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (03) : C95 - &
  • [8] Research on Failure Mechanism of Chip Welding Voids for Power Semiconductor Devices
    Wang, Youliang
    Peng, Zeya
    He, Shengzong
    Zhu, Binruo
    Zhang, Yin
    Chen, Jintao
    2018 25TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2018,
  • [9] MAGNETIC CZOCHRALSKI SILICON FOR POWER DEVICES
    SELIM, FA
    MAJOR, LB
    FIEGL, GF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (06) : C266 - C266
  • [10] Welded silicon for power electronic devices
    Parkes, C
    Mitchell, SJN
    Armstrong, BM
    Gamble, HS
    Ling, ETG
    INTERNATIONAL JOURNAL OF MATERIALS & PRODUCT TECHNOLOGY, 1996, 11 (1-2): : 145 - 158
12345