Voids in silicon power devices

被引：0
|
作者：
CNR-IMETEM, Catania, Italy [1 ]
机构：
来源：
Solid State Electron | / 12卷 / 2295-2301期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Power loss analysis of silicon carbide devices
    Kumar, A
    Khanna, VK
    Sood, SC
    Gupta, RP
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 2000, 7 (5-6) : 287 - 290
  • [32] The advantages and limitations of silicon carbide power devices
    Janke, Wlodzimierz
    PRZEGLAD ELEKTROTECHNICZNY, 2011, 87 (11): : 41 - 46
  • [33] Prospects of Bipolar Power Devices in Silicon Carbide
    Agarwal, Anant
    Zhang, Qingchun
    Burk, Al
    Callanan, Robert
    Mazumder, Sudip
    IECON 2008: 34TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-5, PROCEEDINGS, 2008, : 2786 - +
  • [34] Power bipolar devices based on silicon carbide
    Ivanov, PA
    Levinshtein, ME
    Mnatsakanov, TT
    Palmour, JW
    Agarwal, AK
    SEMICONDUCTORS, 2005, 39 (08) : 861 - 877
  • [35] SILICON-CARBIDE SUBSTRATES AND POWER DEVICES
    PALMOUR, JW
    TSVETKOV, VF
    LIPKIN, LA
    CARTER, CH
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 377 - 382
  • [36] Silicon carbide high-power devices
    Weitzel, CE
    Palmour, JW
    Carter, CH
    Moore, K
    Nordquist, KJ
    Allen, S
    Thero, C
    Bhatnagar, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) : 1732 - 1741
  • [37] Selective Doping in Silicon Carbide Power Devices
    Roccaforte, Fabrizio
    Fiorenza, Patrick
    Vivona, Marilena
    Greco, Giuseppe
    Giannazzo, Filippo
    MATERIALS, 2021, 14 (14)
  • [38] Gallium Nitride and Silicon Carbide Power Devices
    Shea, John J.
    IEEE ELECTRICAL INSULATION MAGAZINE, 2017, 33 (04) : 72 - 72
  • [39] GETTERING OF METALS BY VOIDS IN SILICON
    RAINERI, V
    FALLICA, PG
    PERCOLLA, G
    BATTAGLIA, A
    BARBAGALLO, M
    CAMPISANO, SU
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 3727 - 3735
  • [40] Voids in silicon as sink for interstitials
    Raineri, V
    Campisano, SU
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 56 - 59
12345