Instabilities in Silicon Power Devices A Review of Failure Mechanisms in Modern Power Devices

被引：35

作者：

Iannuzzo, Francesco ^{[1
]}

Abbate, Carmine ^{[2
]}

Busatto, Giovanni ^{[1
,3
,4
,5
]}

机构：

[1] Univ Cassino & Southern Lazio, Cassino, Italy

[2] Univ Cassino & Southern Lazio, LEI, Cassino, Italy

[3] CNR, Ist Ric Elettromagnetismo & Componenti Elettron, Bologna, Italy

[4] Univ Naples Federico II, I-80138 Naples, Italy

[5] Univ Cassino, Cassino, Italy

来源：

IEEE INDUSTRIAL ELECTRONICS MAGAZINE | 2014年 / 8卷 / 03期

关键词：

DYNAMIC AVALANCHE; REVERSE RECOVERY; PIN DIODE; TURN-OFF; MOSFETS; IGBTS; TRANSISTORS; CAPACITANCE; FILAMENTS;

D O I：

10.1109/MIE.2014.2305758

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the last 15 years, the global demand for power saving, efficiency, and weight, size, and cost reduction in both the consumer and the industrial fields have strongly pushed the research and advancements in electronic power systems. Today, electronic power systems cover nearly the full voltage range (from volts to megavolts) and almost the full power range, if we exclude gigawatt-rated power plants. The applications include: © 2007-2011 IEEE.

引用

页码：28 / 39

页数：12

共 50 条

[21] New "silicon limit" of power devices
Chen, XB
Yang, HQ
Cheng, M
SOLID-STATE ELECTRONICS, 2002, 46 (08) : 1185 - 1192
[22] Silicon Carbide Based Power Devices
Ostling, Mikael
2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
[23] Power Converters with Silicon Carbide Devices
Rabkowski, Jacek
2014 PROCEEDINGS OF THE 14TH BIENNIAL BALTIC ELECTRONICS CONFERENCE (BEC 2014), 2014, : 7 - 16
[24] GaN HEMTs on silicon for power devices
Escoffier, R.
Torres, A.
Fayolle-Lecocq, M.
Buj-Dufournet, C.
Morvan, E.
Charles, M.
Poisson, M. A.
IEEE INTERNATIONAL SOI CONFERENCE, 2012,
[25] Breakdown Mechanisms of Power Semiconductor Devices
Guo, Haijun
Duan, Baoxing
Wu, Hao
Yang, Yintang
IETE TECHNICAL REVIEW, 2019, 36 (03) : 243 - 252
[26] Silicon power devices: RF power transistor & electric power device
Liu, YK
Zhao, T
Li, SF
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 149 - 154
[27] Failure Analysis on Integrated Power Devices
Chiang, Arthur
Le, David
Wu, Huixian
ISTFA 2012: CONFERENCE PROCEEDINGS FROM THE 38TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS, 2012, : 211 - 216
[28] Characteristics and Applications of Silicon Carbide Power Devices in Power Electronics
Kondrath, Nisha
Kazimierczuk, Marian K.
INTERNATIONAL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS, 2010, 56 (03) : 231 - 236
[29] Power Electronics Innovation by Silicon Carbide Power Semiconductor Devices
Okumura, Hajime
2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK), 2014,
[30] Junction Temperature Extraction for Silicon Carbide Power Devices: A Comprehensive Review
Wen, Huiqing
Li, Xiaoyu
Zhang, Fei
Qu, Zifeng
Jiang, Yizhou
Luo, Ningyu
Wang, Guangyu
Wang, Xue
Liu, Wen
Cui, Miao
Zhao, Yinchao
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2025, 40 (02) : 3090 - 3111

← 1 2 3 4 5 →