Influence of deposition pressure on the structural, optical and electrical properties of Sb2Se3 thin films grown by RF magnetron sputtering

被引：0
|
作者：
Zhao, Fei [1 ]
Tao, Jiahua [1 ]
Guo, Yixin [1 ]
Ma, Chuanhe [1 ]
Jiang, Jinchun [1 ,2 ]
Chu, Junhao [1 ,2 ,3 ]
机构：
[1] East China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200241, Peoples R China
[2] Shanghai Ctr Photovolta, Shanghai 201201, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2019年 / 13卷 / 5-6期
基金：
美国国家科学基金会;
关键词：
Sb2Se3 thin films; Magnetron sputtering; Cry stallinity; Electrical mobility; Optical band gap; LARGE-SCALE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, Sb2Se3 thin films were deposited on quartz substrates by radio frequency (RF) magnetron sputtering at different deposition pressures. The structural, optical and electrical properties of the Sb2Se3 films were investigated by XRD, Raman, XPS, SEM, Hall Effect and UV-Vis measurements. With optimized deposition pressure of 0.5 Pa, the fabricated Sb2Se3 film has the highest crystallinity, the most stable valence of Se2- and Sb3+, the maximum mobility (21.54 cm(2) V-1 s(-1)) and the suitable optical band gap (1.33 eV). This study provides a guideline to prepare Sb2Se3 film for photovoltaics.
引用
收藏
页码：359 / 363
页数：5
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