The temperature and energy dependence of photoinduced scalar phenomena in chalcogenide thin films

Temperature and energy dependence of thermalbleaching(TB) effect and photorefraction(PR) change, in chalcogenide As40Ge10Se50 - xSx, (x = 0, 25, 35 at.%) thin films, have been investigated, When these films were exposed for 15 min Using the blue-pass filtered Hg lamp(similar to 4300 Angstrom) after annealing for 30 min around the glass transition temperature Tg(200 degrees C), the stable characteristics of scalar effect were shown in As40Ge10Se15S35 composition, and in that composition the refractive index change Delta n was varied up to 0.02 similar to 0.46 according to each thickness conditions and the optical energy gap was shifted to a longer wavelength of approximately 0.67eV, especially for 1000 Angstrom-thickness, Also in the case that light source was He-Ne laser, we could observe refractive index change Delta nand red-shift of adsorption edge.