Electrical insulation and breakdown properties of SiO2 and Al2O3 thin multilayer films deposited on stainless steel by physical vapor deposition

被引：14

作者：

Martinez-Perdiguero, Josu ^{[1
,2
]}

Mendizabal, Lucia ^{[2
]}

Morant-Minana, Maria C. ^{[1
,3
,4
]}

Castro-Hurtado, Irene ^{[1
,3
,4
]}

Juarros, Aritz ^{[1
,2
]}

Ortiz, Rocio ^{[1
,5
]}

Rodriguez, Ainara ^{[1
,3
,4
]}

机构：

[1] CIC MicroGUNE, Arrasate Mondragon, Spain

[2] IK4 Tekniker, MicronanoFabricat Unit, Eibar 20600, Gipuzkoa, Spain

[3] Univ Navarra, CEIT IK4, San Sebastian, Spain

[4] Univ Navarra, Tecnun, San Sebastian, Spain

[5] IK4 Tekniker, Ultraprecis Proc Unit, Eibar 20600, Gipuzkoa, Spain

来源：

THIN SOLID FILMS | 2015年 / 595卷

关键词：

Silicon oxide; Alumina; Multilayer; Stainless steel; Magnetron sputtering; Breakdown field strength; Leakage current; CU(IN; GA)SE-2; SOLAR-CELLS; BARRIER LAYERS;

D O I：

10.1016/j.tsf.2015.10.076

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of dielectric thin layers deposited on conducting substrates still need to be thoroughly characterized for a wide variety of applications such as solar modules, flexible displays and sensor integration. In this work, thin dielectric films composed of layers and alternated multilayers of SiO2 and Al2O3 up to a total thickness of 3 mu m have been deposited on flexible rough stainless steel substrates by means of reactive magnetron sputtering. Their electrical properties have been studied focusing on important parameters such as leakage current density and disruptive field strengths. Moreover, temperature annealing and bending effects have been quantified. It is concluded that the best electrical properties with this type of materials are achieved with multilayered structures. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：171 / 175

页数：5

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