MoS2 decoration by Mo-atomsand the MoS2 Mo-graphene heterostructure: a theoretical study

被引:12
|
作者
Kvashnin, D. G. [1 ,2 ]
Sorokin, P. B. [1 ,2 ]
Seifert, G. [3 ]
Chernozatonskii, L. A. [1 ]
机构
[1] Emanuel Inst Biochem Phys RAS, Moscow 119334, Russia
[2] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[3] Tech Univ Dresden, D-01062 Dresden, Germany
基金
俄罗斯科学基金会;
关键词
DOUBLE-LAYER GRAPHENE; INSULATOR-TRANSITION; METAL;
D O I
10.1039/c5cp04286k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Here we propose a completely new covalent heterostructure based on graphene and self-decorated MoS2 monolayers. Detailed investigation of the decoration process of the MoS2 surface by Mo adatoms was performed using first principles DFT methods. Comparison between valence-only and semicore pseudopotentials was performed to correctly describe the interaction between Mo adatoms and the MoS2 surface. It was found that self-decoration by Mo atoms is favorable from an energetic point of view. We studied in detail various decoration paths of Mo atoms on the MoS2 surface. The strong variation of electronic properties after the decoration of MoS2 was found. The impact of the presence of Mo adatoms on the electronic properties of the graphene/MOS2 heterostructure was shown.
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页码:28770 / 28773
页数:4
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