Characteristics of Pb(Zr,Ti)O3 thin films prepared on various substrates by source gas pulse-introduced metalorganic chemical vapor deposition

Pb(Zr,Ti)O-3 thin films were deposited on (111)Pt/Ti/ SiO2/Si, (III)Pt/TiO2/SiO2/Si and (III)Ir/TiO2/SiO2/Si substrates by source gas pulse-introduced metalorganic chemical vapor deposition (MOCVD). When the deposition temperature decreased, PZT films tended to be oriented to (100) direction regardless of the kinds of substrate. This orientation is considered to be the original character of Pb(ZrTi)03 film deposited at low deposition temperature. Surface roughness decreased by decreasing the deposition temperature. Large ferroelectricity with the remanent polarization (Pr) value above 30 muC/cm(2) was obtained regardless of the substrate when the deposition temperature was 580degreesC. However, only the film deposited on (111)Pt/Ti/SiO2/Si substrate showed the ferroelectricity with Pr above 30 muC/cm(2) when the deposition temperature decreased at 415, degreesC. This is because the Ti element diffused out at the surface of the substrate from the bottom of Pt layer is useful as a nucleation site of Pb(ZrTi)O-3 phase.