C-AXIS-ORIENTED PB(ZR, TI)O3 THIN-FILMS PREPARED BY DIGITAL METALORGANIC CHEMICAL-VAPOR-DEPOSITION METHOD

被引:10
|
作者
SOTOME, Y
SENZAKI, J
MORITA, S
TANIMOTO, S
HIRAI, T
UENO, T
KUROIWA, K
TARUI, Y
机构
[1] SHARP CO LTD,INTEGRATED CIRCUIT GRP,VLSI DEV LAB,TENRI 632,JAPAN
[2] NISSAN MOTOR CO LTD,ELECTR RES LAB,YOKOSUKA,KANAGAWA 237,JAPAN
[3] ASAHI CHEM IND CO LTD,LSL LAB,FUJI,SHIZUOKA 416,JAPAN
[4] WASEDA UNIV,SCH SCI & ENGN,TOKYO,TOKYO 169,JAPAN
关键词
FERROELECTRICS; PZT; PEROVSKITE; PYROCHLORE; DIGITAL MOCVD; LAYER-BY-LAYER GROWTH;
D O I
10.1143/JJAP.33.4066
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tetragonal perovskite Pb(ZrxTi(1-x)O3 (PZT) film with single c-axis orientation was successfully fabricated on a single-crystalline MgO(100) substrate at a surface temperature as low as 480-degrees-C using a ''digital metalorganic chemical vapor deposition (digital MOCVD)'' method. In this method, each metalorganic source was supplied alternately into the MOCVD reactor to prevent the formation of unexpected phases such as pyrochlore due to gas phase reaction at the low processing temperature. For layer-by-layer growth in the MOCVD method, the introduction sequence and amount of metalorganic sources supplied were adjusted to correspond to the crystal structure and density of the fabricated film. This is the first report on the fabrication of tetragonal perovskite PZT film with single c-axis orientation using the ''digital MOCVD'' method.
引用
收藏
页码:4066 / 4069
页数:4
相关论文
共 50 条
  • [1] METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILMS
    PENG, CH
    DESU, SB
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (07) : 1799 - 1812
  • [2] PREPARATION OF C-AXIS-ORIENTED BI4TI3O-12 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    NAKAMURA, T
    MUHAMMET, R
    SHIMIZU, M
    SHIOSAKI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B): : 4086 - 4088
  • [3] SWITCHING AND FATIGUE CHARACTERISTICS OF (PB, LA)(ZR, TI)O3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    TOMINAGA, K
    SHIRAYANAGI, A
    TAKAGI, T
    OKADA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9B): : 4082 - 4085
  • [4] METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF FERROELECTRIC PB(ZR,TI)O-3 THIN-FILMS
    SHIOSAKI, T
    SHIMIZU, M
    [J]. INTEGRATED FERROELECTRICS, 1995, 9 (1-3) : 13 - 20
  • [5] SWITCHING KINETICS OF PB(ZR, TI)O3 THIN-FILMS GROWN BY CHEMICAL-VAPOR-DEPOSITION
    KATAYAMA, T
    SHIMIZU, M
    SHIOSAKI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (9A): : 3943 - 3949
  • [6] HIGHLY C-AXIS-ORIENTED PB(ZR, TI)O3 FILMS PREPARED BY SPUTTERING
    FUKAMI, T
    MINEMURA, I
    HIROSHIMA, Y
    OSADA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9B): : 2155 - 2158
  • [7] PREPARATION OF C-AXIS-ORIENTED PLT THIN-FILMS BY THE METALORGANIC CHEMICAL VAPOR-DEPOSITION METHOD
    TOMINAGA, K
    MIYAJIMA, M
    SAKASHITA, Y
    SEGAWA, H
    OKADA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (10): : L1874 - L1876
  • [8] PREPARATION AND PROPERTIES OF (PB,LA)(ZR,TI)O3 THIN-FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OKADA, M
    TOMINAGA, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (04) : 1955 - 1959
  • [9] PREPARATION AND EVALUATION OF PB(ZR.TI)O3 THIN-FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    TOMONARI, H
    ISHIU, T
    SAKATA, K
    TAKENAKA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (9B): : 2998 - 3000
  • [10] DEPOSITION BEHAVIOR OF PB(ZRXTI1-X)O3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    CHOI, JH
    KIM, HG
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) : 6413 - 6417