Hexagonal zinc oxide thin films on cubic MgO (100) substrates deposited by pulsed laser deposition

被引:0
|
作者
Shan, F. K. [1 ]
Liu, G. X. [1 ]
Lee, W. J. [1 ]
Shin, B. C. [1 ]
机构
[1] Dong Eui Univ, Elect Ceram Ctr, Pusan 614714, South Korea
关键词
ZnO; thin film; pulsed laser deposition; XRD; PL; AFM;
D O I
10.1080/10584580600660298
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zinc oxide (ZnO) thin films were deposited on cubic MgO (100) substrates at different temperatures (100-500 degrees C) using pulsed laser deposition. For comparison, ZnO thin films were also deposited on glass substrates. An x-ray diffractometer was used to investigate the structural properties of the thin films. It was found that the thin films on MgO substrates showed hexagonal structure with (100), (002), and (101) orientations. However, the thin films on amorphous glass substrates show c-axis oriented ZnO only. Spectrometer was used to measure the luminescent properties of the thin films. All of the thin films showed two emission peaks. One was the near band edge (NBE) emission; and the other was the visible deep-level (DL) emission. The thin film on MgO substrate grown at 300 degrees C showed the highest luminescent peak. However, 500 degrees C was found to be the best condition for the thin film grown on glass substrate. The DL emission decreased with time. The thin films were annealed in N-2 and O-2 ambient in a rapid thermal annealing system for 3 min to find the origin of the DL emission. It was found that the oxygen vacancies instead of the zinc interstitials were responsible for the DL emission.
引用
收藏
页码:181 / 190
页数:10
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