Reactive pulsed laser deposition of zinc oxide thin films

被引：18
|
作者：
Bílková, P
Mitu, B
Marotta, V
Mattei, G
Orlando, S [1 ]
Santagata, A
机构：
[1] CNR, IMIP PZ, Zona Ind Tito Scalo, I-85050 Tito, PZ, Italy
[2] Charles Univ Prague, Fac Math & Phys, Dept Macromol Phys, CR-18000 Prague 8, Czech Republic
[3] Natl Inst Lasers Plasma & Radiat Phys, Low Temp Plasma Phys Dept, Bucharest 76900, Romania
[4] CNR, IMIP, I-00016 Monterotondo, Rome, Italy
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期
关键词：
D O I：
10.1007/s00339-004-2629-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Zinc oxide thin films have been obtained by reactive pulsed laser ablation of a Zn target in O-2 atmosphere (gas pressure 2 Pa) using a doubled frequency Nd:YAG laser (532 nm) which was also assisted by a 13.56 MHz radiofrequency (rf) plasma. The gaseous species have been deposited on Si(100) substrates positioned in on-axis configuration and heated from RT up to 500 degreesC. The obtained thin films have been compared to those produced in the same conditions by ablation of a ZnO target. The deposited thin films have been characterized by scanning electron microscopy, X-ray diffraction, Raman and infrared spectroscopy techniques. The influence of the rf plasma on the morphological and structural characteristics of these thin films is also briefly discussed.
引用
收藏
页码：1061 / 1065
页数：5
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