Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

被引:1
|
作者
Alathbah, Moath [1 ,2 ]
Elgaid, Khaled [1 ]
机构
[1] Cardiff Univ, Sch Engn, Cardiff CF24 3AA, Wales
[2] King Saud Univ, Coll Engn, Riyadh 11451, Saudi Arabia
基金
英国工程与自然科学研究理事会;
关键词
AlGaN; GaN HEMTs; device isolation; AlN; planar gatefeed; gate leakage; HEMT mesa etch; GAN; LEAKAGE; IMPLANTATION; RESISTIVITY; PERFORMANCE; SILICON; DC;
D O I
10.3390/mi13112007
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.
引用
收藏
页数:12
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