Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

被引:1
|
作者
Alathbah, Moath [1 ,2 ]
Elgaid, Khaled [1 ]
机构
[1] Cardiff Univ, Sch Engn, Cardiff CF24 3AA, Wales
[2] King Saud Univ, Coll Engn, Riyadh 11451, Saudi Arabia
基金
英国工程与自然科学研究理事会;
关键词
AlGaN; GaN HEMTs; device isolation; AlN; planar gatefeed; gate leakage; HEMT mesa etch; GAN; LEAKAGE; IMPLANTATION; RESISTIVITY; PERFORMANCE; SILICON; DC;
D O I
10.3390/mi13112007
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance.
引用
收藏
页数:12
相关论文
共 50 条
  • [21] Open gate AlGaN/GaN HEMT biosensor: Sensitivity analysis and optimization
    Pal, Praveen
    Pratap, Yogesh
    Gupta, Mridula
    Kabra, Sneha
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 156
  • [22] An enhancement-mode AlGaN/GaN HEMT with recessed-gate
    Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071, China
    Pan Tao Ti Hsueh Pao, 2008, 9 (1682-1685):
  • [23] Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
    Rao, Manisha
    Ranjan, Ravi
    Kashyap, Nitesh
    Sarin, Rakesh Kumar
    TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, 2021, 22 (05) : 691 - 699
  • [24] A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance
    Yu, Guohao
    Cai, Yong
    Wang, Yue
    Dong, Zhihua
    Zeng, Chunhong
    Zhao, Desheng
    Qin, Hua
    Zhang, Baoshun
    IEEE ELECTRON DEVICE LETTERS, 2013, 34 (06) : 747 - 749
  • [25] Thermal instability of copper gate AlGaN/GaN HEMT on Si substrate
    Park, J.
    Lee, K.
    Cha, H. -Y.
    Seo, K.
    ELECTRONICS LETTERS, 2010, 46 (14) : 1011 - 1012
  • [26] Gate leakage current suppression in AlGaN/GaN HEMT by RTP annealing
    Mahajan, Somna S.
    Tomar, Anushree
    Laishram, Robert
    Kapoor, Sonalee
    Mailk, Amit
    Naik, A. A.
    Vinayak, Seema
    Sehgal, B. K.
    PHYSICS OF SEMICONDUCTOR DEVICES, 2014, : 145 - 147
  • [27] Performance Analysis of Normally-on Dual Gate Algan/Gan Hemt
    Manisha Rao
    Ravi Ranjan
    Nitesh Kashyap
    Rakesh Kumar Sarin
    Transactions on Electrical and Electronic Materials, 2021, 22 : 691 - 699
  • [28] Gate leakage mechanisms of the AlGaN/GaN HEMT with fluorinated graphene passivation
    Ding, Xiaoyu
    Song, Liang
    Yu, Guohao
    Cai, Yong
    Sun, Yuhua
    Zhang, Bingliang
    Du, Zhongkai
    Zeng, Zhongming
    Zhang, Xinping
    Zhang, Baoshun
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 162
  • [29] Polarization Properties in AlGaN/GaN HEMT-Array with a Shifted Gate
    Xing, Runxian
    Zhang, Ping
    Guo, Hongyang
    Yu, Guohao
    Zhou, Jiaan
    Yang, An
    Dai, Shige
    Zeng, Zhongming
    Zhang, Xingping
    Zhang, Baoshun
    PLASMONICS, 2024, 19 (05) : 2545 - 2552
  • [30] Enhancing AlGaN/GaN HEMT Performance through Gate-All-Around AlN Passivation: A Comparative Study with a Planar MIS-HEMT
    Soma, Umamaheshwar
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (04) : 2062 - 2075