Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable α-FeSi2

被引：4

作者：

Naito, Muneyuki ^{[1
]}

Ishimaru, Manabu ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 8-9期

关键词：

Iron silicides; Ion implantation; Metastable phase; ION-BEAM SYNTHESIS; EPITAXIAL-GROWTH; LOW-TEMPERATURE; STRUCTURAL-CHARACTERIZATION; IRON DISILICIDE; CUBIC FESI2; SI(111); BETA-FESI2; FILMS;

D O I：

10.1016/j.nimb.2009.01.035

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Crystallization processes of amorphous Fe-Si layers have been investigated using transmission electron microscopy (TEM). Si(1 1 1) substrates were irradiated with 120 keV Fe ions at -150 degrees C to a fluence of 1.0 x 10(17) cm(2). An Fe-rich amorphous layer embedded in an amorphous Si was formed in the as-irradiated sample. Plan-view TEM observations revealed that a part of the amorphous Fe-Si layer crystallized to the metastable alpha-FeSi2 after thermal annealing at 350 degrees C for 8 h. The lattice parameter of c-axis decreased with thermal annealing. It was considered that the change in the lattice parameter originates from the decrease of the Fe occupancy at (0,0, 1/2) and its equivalent positions in the unit cell of the metastable alpha-FeSi2. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1290 / 1293

页数：4

共 50 条

[31] Formation rule of β-FeSi2 phases in (Fe, M) Si2 ternary alloys
Li Sheng-Bin
Li Xiao-Na
Dong Chuang
Jiang Xin
ACTA PHYSICA SINICA, 2010, 59 (06) : 4267 - 4278
[32] Formation of β-FeSi2 by excimer laser irradiation of 57Fe/Si bilayers
Wagner, S
Carpene, E
Schaaf, P
Weisheit, M
APPLIED SURFACE SCIENCE, 2002, 186 (1-4) : 156 - 161
[33] Structural characterization of amorphous Fe-Si and its recrystallized layers
Naito, Muneyuki
Ishimaru, Manabu
Hirotsu, Yoshihiko
Valdez, James A.
Sickafus, Kurt E.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 250 : 283 - 286
[34] Formation process of β-FeSi2/Si heterostructure in high-dose Fe ion implanted Si
Ishimaru, M
Omae, K
Bae, IT
Naito, M
Hirotsu, Y
Valdez, JA
Sickafus, KE
JOURNAL OF APPLIED PHYSICS, 2006, 99 (11)
[35] Growth of β-FeSi2 layers deposited from a molten salt
Ohishi, T
Mizuyoshi, Y
Matsuyama, T
Tatsuoka, H
Kuwabara, H
THIN SOLID FILMS, 2004, 461 (01) : 63 - 67
[36] Growth of β-FeSi2 layers on Si(100) substrates by exchange reaction between Si and molten salts X
Yoneyama, Tsuyoshi
Yoshikawa, Takeshi
Morita, Kazuki
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5233 - 5237
[37] Effect of oblique-angle deposition on early stage of Fe-Si growth
Harada, Hidehiko
Jomori, Shinji
Suzuki, Motofumi
Kinoshita, Kohei
Nakajima, Kaoru
Kimura, Kenji
THIN SOLID FILMS, 2007, 515 (22) : 8277 - 8280
[38] ELECTRON-SPECTROSCOPY STUDY OF THE FE-SI(111) AND FESI2-SI(111) INTERFACE FORMATION
WALLART, X
ZENG, HS
NYS, JP
DALMAI, G
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 253 - 257
[39] Necessity of Epitaxial Growth of β-FeSi2 Thin Films in Formation of n-Type β-FeSi2/p-Type Si Heterojunction Photodiodes
Iwasaki, R.
Promros, N.
Yamashita, K.
Izumi, S.
Funasaki, S.
Shaban, M.
Yoshitake, T.
LOW-DIMENSIONAL NANOSCALE ELECTRONIC AND PHOTONIC DEVICES 5 -AND- STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 54 (SOTAPOCS 54), 2012, 50 (06): : 157 - 162
[40] Solid-phase growth of β-FeSi2 in thick Fe film on Si(111) substrates
Momiyama, K.
Kanomata, K.
Suzuki, T.
Kubota, S.
Hirose, F.
THIN SOLID FILMS, 2012, 525 : 208 - 212

← 1 2 3 4 5 →