Early stage of the crystallization in amorphous Fe-Si layers: Formation and growth of metastable α-FeSi2

被引：4
|
作者：
Naito, Muneyuki [1 ]
Ishimaru, Manabu [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2009年 / 267卷 / 8-9期
关键词：
Iron silicides; Ion implantation; Metastable phase; ION-BEAM SYNTHESIS; EPITAXIAL-GROWTH; LOW-TEMPERATURE; STRUCTURAL-CHARACTERIZATION; IRON DISILICIDE; CUBIC FESI2; SI(111); BETA-FESI2; FILMS;
D O I：
10.1016/j.nimb.2009.01.035
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Crystallization processes of amorphous Fe-Si layers have been investigated using transmission electron microscopy (TEM). Si(1 1 1) substrates were irradiated with 120 keV Fe ions at -150 degrees C to a fluence of 1.0 x 10(17) cm(2). An Fe-rich amorphous layer embedded in an amorphous Si was formed in the as-irradiated sample. Plan-view TEM observations revealed that a part of the amorphous Fe-Si layer crystallized to the metastable alpha-FeSi2 after thermal annealing at 350 degrees C for 8 h. The lattice parameter of c-axis decreased with thermal annealing. It was considered that the change in the lattice parameter originates from the decrease of the Fe occupancy at (0,0, 1/2) and its equivalent positions in the unit cell of the metastable alpha-FeSi2. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1290 / 1293
页数：4
相关论文
共 50 条
  • [21] The formation of β-FeSi2 precipitates in microcrystalline Si
    E. I. Terukov
    O. I. Kon’kov
    V. Kh. Kudoyarova
    O. B. Gusev
    V. Yu. Davydov
    G. N. Mosina
    Semiconductors, 2002, 36 : 1235 - 1239
  • [22] A NEW METASTABLE EPITAXIAL SILICIDE - FESI2/SI(111)
    DEPARGA, ALV
    DELAFIGUERA, J
    OCAL, C
    MIRANDA, R
    ULTRAMICROSCOPY, 1992, 42 : 845 - 850
  • [23] The formation of β-FeSi2 precipitates in microcrystalline Si
    Terukov, EI
    Kon'kov, OI
    Kudoyarova, VK
    Gusev, OB
    Davydov, VY
    Mosina, GN
    SEMICONDUCTORS, 2002, 36 (11) : 1235 - 1239
  • [24] XPS INVESTIGATIONS OF FESI, FESI2 AND FE IMPLANTED IN SI AND GE
    KINSINGER, V
    DEZSI, I
    STEINER, P
    LANGOUCHE, G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1990, 2 (22) : 4955 - 4961
  • [25] Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces
    Wohllebe, A
    Hollander, B
    Mesters, S
    Dieker, C
    Crecelius, G
    Michelsen, W
    Mantl, S
    THIN SOLID FILMS, 1996, 287 (1-2) : 93 - 100
  • [26] β-FeSi2 and Schottky barrier at Fe/Si interface
    Lal, Chhagan
    Dhunna, Renu
    Dhaka, R. S.
    Barman, S. R.
    Jain, I. P.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (02): : 177 - 183
  • [27] EFFECTS OF FE AND FESI2 ON NITRIDING OF SI POWDER
    FATE, WA
    MILBERG, ME
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1978, 61 (11-1) : 531 - 532
  • [28] Growth of ß-FeSi2 layers on Si(111) by solid phase and reactive deposition epitaxies
    Miquita, DR
    Paniago, R
    Rodrigues, WN
    Moreira, MVB
    Pfannes, HD
    de Oliveira, AG
    THIN SOLID FILMS, 2005, 493 (1-2) : 30 - 34
  • [29] ALLOTAXIAL GROWTH OF EPITAXIAL SI/FESI2,/SI HETEROSTRUCTURES
    MULLER, O
    MANTL, S
    RADERMACHER, K
    BAY, HL
    CRECELIUS, G
    DIEKER, C
    MESTERS, S
    APPLIED SURFACE SCIENCE, 1993, 73 : 141 - 145
  • [30] SOME COMMENTS ABOUT CRYSTALLIZATION OF FE-SI AMORPHOUS FILMS
    MARCHAL, G
    MANGIN, P
    PIECUCH, M
    JANOT, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01): : K29 - K31
12345