Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

被引：30
|
作者：
Wang, Wei [1 ,2 ]
Shi, Jiawei [2 ]
Ma, Dongge [1 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China
[2] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130012, Peoples R China
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2009年 / 56卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Memory; nanoparticle floating gate; organic thin-film transistor (OTFT); ELEMENT;
D O I：
10.1109/TED.2009.2016031
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.
引用
收藏
页码：1036 / 1039
页数：4
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