Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

被引：33
|
作者：
Pokatilov, E. P. [1 ]
Nika, D. L. [1 ]
Balandin, A. A. [1 ]
机构：
[1] Univ Calif Riverside, Dept Elect Engn, Nanodevice Lab, Riverside, CA 92521 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 11期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2349302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors show that the electron mobility can be strongly enhanced in AlN/GaN/AlN heterostructures with the shallow InxGa1-xN channel-nanogroove-in the middle of the potential well. The modified heterostructure has the room-temperature electron mobility, which is five times larger than that in conventional quantum wells. The maximum mobility enhancement is achieved for In content x approximate to 0.05, which is sufficient to weaken the intersubband electron scattering without leading to the substantial electron-interface-phonon scattering. The mobility enhancement is pronounced for a wide range of the carrier densities (10(11)-10(13) cm(-2)), which is important for GaN technology. (c) 2006 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 50 条
  • [31] Optical characterization of AlN/GaN heterostructures
    Ursaki, VV
    Tiginyanu, IM
    Zalamai, VV
    Hubbard, SM
    Pavlidis, D
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (08) : 4813 - 4818
  • [32] Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
    Smorchkova, IP
    Keller, S
    Heikman, S
    Elsass, CR
    Heying, B
    Fini, P
    Speck, JS
    Mishra, UK
    APPLIED PHYSICS LETTERS, 2000, 77 (24) : 3998 - 4000
  • [33] Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
    Corekci, S.
    Dugan, S.
    Ozturk, M. K.
    Cetin, S. S.
    Cakmak, M.
    Ozcelik, S.
    Ozbay, E.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (07) : 3278 - 3284
  • [34] Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures
    Mazumder, Baishakhi
    Kaun, Stephen W.
    Lu, Jing
    Keller, Stacia
    Mishra, Umesh K.
    Speck, James S.
    APPLIED PHYSICS LETTERS, 2013, 102 (11)
  • [35] Phonon spectrum and group velocities in AlN/GaN/AlN and related heterostructures
    Pokatilov, EP
    Nika, DL
    Balandin, AA
    SUPERLATTICES AND MICROSTRUCTURES, 2003, 33 (03) : 155 - 171
  • [36] Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness
    S. Çörekçi
    S. Dugan
    M. K. Öztürk
    S. Ş. Çetin
    M. Çakmak
    S. Özçelik
    E. Özbay
    Journal of Electronic Materials, 2016, 45 : 3278 - 3284
  • [37] Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors
    Li, Yat
    Xiang, Jie
    Qian, Fang
    Gradecak, Silvija
    Wu, Yue
    Yan, Hao
    Yan, Hao
    Blom, Douglas A.
    Lieber, Charles M.
    NANO LETTERS, 2006, 6 (07) : 1468 - 1473
  • [38] Intrinsically limited mobility of the two-dimensional electron gas in gated AlGaN/GaN and AlGaN/AlN/GaN heterostructures
    Polyakov, V. M.
    Schwierz, F.
    Cimalla, I.
    Kittler, M.
    Luebbers, B.
    Schober, A.
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)
  • [39] AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD
    Tang, Jian
    Wang, Xiaoliang
    Chen, Tangsheng
    Xiao, Hongling
    Ran, Junxue
    Zhang, Minglan
    Hu, Guoxin
    Feng, Chun
    Hou, Qifeng
    Wei, Meng
    Li, Jinmin
    Wang, Zhanguo
    2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 1106 - +
  • [40] High electron mobility transistors based on the AlN/GaN heterojunction
    Adikimenakis, A.
    Aretouli, K. E.
    Iliopoulos, E.
    Kostopoulos, A.
    Tsagaraki, K.
    Konstantinidis, G.
    Georgakilas, A.
    MICROELECTRONIC ENGINEERING, 2009, 86 (4-6) : 1071 - 1073
12345