High electron mobility transistors based on the AlN/GaN heterojunction

被引：29
|
作者：
Adikimenakis, A. [1 ]
Aretouli, K. E.
Iliopoulos, E.
Kostopoulos, A.
Tsagaraki, K.
Konstantinidis, G.
Georgakilas, A.
机构：
[1] Fdn Res & Technol Hellas, IESL, MRG, Iraklion 71110, Greece
来源：
MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期
关键词：
High electron mobility transistors; Molecular beam epitaxy; Aluminum nitride; Gallium nitride; MOLECULAR-BEAM EPITAXY; GAN;
D O I：
10.1016/j.mee.2009.02.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The development of high electron mobility transistors (HEMTs) from AlN/GaN heterostructures, grown by plasma assisted molecular beam epitaxy has been investigated. It is shown that AlN can be grown fully strained on GaN, up to a thickness of 5 nm, when strain relaxation by introduction of microcracks is initiated. An optimized HEMT structure with 4.5 nm AlN barrier and 1 nm GaN cap layer exhibited a two-dimensional electron gas (2DEG) density of 3.6 x 10(13) cm(-2) along with room-temperature mobility of similar to 1200 cm(2)/V s, with corresponding sheet resistance of 144 Omega/sq. The measured 2DEG density is in very good agreement with self-consistent Schrodinger-Poisson calculations for fully strained AlN layer. HEMT transistors with 1 mu m gate length exhibited record-high source-drain current density of 1.8 A/mm and maximum transconductance of 400 mS/mm. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：1071 / 1073
页数：3
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