Benefits of quantum well intermixing in high power diode lasers

被引：9
|
作者：
Najda, SP [1 ]
Bacchin, G [1 ]
Qiu, B [1 ]
Liu, X [1 ]
Kowalski, OP [1 ]
Silver, M [1 ]
McDougall, SD [1 ]
Hamilton, CJ [1 ]
Marsh, JH [1 ]
机构：
[1] Intense Photon Ltd, Glasgow G72 0BN, Lanark, Scotland
来源：
NOVEL IN-PLANE SEMICONDUCTOR LASERS III | 2004年 / 5365卷
关键词：
semiconductor diode lasers; GaAs; diode laser arrays; catastrophic optical damage;
D O I：
10.1117/12.530263
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be Lip to similar to20% of giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, the cavity length, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.
引用
收藏
页码：1 / 13
页数：13
相关论文
共 50 条
  • [41] Optical gain in GaAsBi/GaAs quantum well diode lasers
    Igor P. Marko
    Christopher A. Broderick
    Shirong Jin
    Peter Ludewig
    Wolfgang Stolz
    Kerstin Volz
    Judy M. Rorison
    Eoin P. O’Reilly
    Stephen J. Sweeney
    [J]. Scientific Reports, 6
  • [42] Internal Loss in Diode Lasers with Quantum Well-Dots
    Zhukov, A. E.
    Nadtochiy, A. M.
    Kryzhanovskaya, N. V.
    Shernyakov, Yu. M.
    Gordeev, N. Yu.
    Serin, A. A.
    Mintairov, S. A.
    Kalyuzhnyy, N. A.
    Payusov, A. S.
    Kornyshov, G. O.
    Maximov, M. V.
    Wang, Y.
    [J]. SEMICONDUCTORS, 2023, 57 (11) : 513 - 518
  • [43] Gain characteristics of InGaN/GaN quantum well diode lasers
    Song, YK
    Kuball, M
    Nurmikko, AV
    Bulman, GE
    Doverspike, K
    Shepperd, ST
    Weeks, TW
    Leonard, M
    Kong, HS
    Dieringer, H
    Edmond, J
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (12) : 1418 - 1420
  • [44] High power, high brightness diode lasers for kW lasers systems
    Rossin, Victor
    Peters, Matthew
    Demir, Abdullah
    Morehead, James J.
    Guo, James
    Xiao, Yan
    Cheng, Jane
    Hsieh, Allen
    Duesterberg, Richard
    Skidmore, Jay
    [J]. PROCEEDINGS OF THE 2015 HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD), 2015, : 35 - 36
  • [45] Power combiner for high-power diode lasers
    Selvas-Aguilar, R
    Martinez-Rios, A
    Torres-Gomez, I
    Duran-Ramirez, VM
    Barbosa-García, O
    [J]. FIFTH SYMPOSIUM OPTICS IN INDUSTRY, 2006, 6046
  • [46] HIGH-POWER, HIGH-TEMPERATURE INGAAS-ALGAAS STRAINED-LAYER QUANTUM-WELL DIODE-LASERS
    WANG, CA
    CHOI, HK
    WALPOLE, JN
    EVANS, GA
    REICHERT, WF
    CHOW, WW
    FULLER, CT
    [J]. ELECTRONICS LETTERS, 1994, 30 (08) : 646 - 648
  • [47] HIGH-POWER, HIGH-TEMPERATURE OPERATION OF ALINGAAS-ALGAAS STRAINED SINGLE-QUANTUM-WELL DIODE-LASERS
    CHOI, HK
    WANG, CA
    KOLESAR, DF
    AGGARWAL, RL
    WALPOLE, JN
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (10) : 857 - 859
  • [48] Integration of high-gain and high-saturation-power active regions using quantum-well intermixing and offset-quantum-well regrowth
    Skogen, E
    Raring, J
    DenBaars, S
    Coldren, L
    [J]. ELECTRONICS LETTERS, 2004, 40 (16) : 993 - 994
  • [49] High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide diode lasers
    Ha, W
    Gambin, V
    Wistey, M
    Bank, S
    Kim, S
    Harris, JS
    [J]. NOVEL IN-PLANE SEMICONDUCTOR LASERS, 2002, 4651 : 42 - 48
  • [50] Quantum well intermixing for photonic applications
    Li, EH
    [J]. PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VIII, PTS 1 AND 2, 2000, 3944 : 120 - 134
12345