High efficiency multiple quantum well GaInNAs/GaNAs ridge-waveguide diode lasers

We present a new structure with nitrogen incorporation in barrier and new material with antimony for developing post-annealed long wavelength material. This new structure and new material result in a shift of the post-annealed luminescence out to 1.6 um. The new structure, nitrogen in barrier, reduces the blue-shift of the emission spectrum by suppressing nitrogen out-diffusion from the quantum wells (QWs) and decreasing carrier confinement between barriers and QWs. GaNAs or GaNAsSb barriers can also reduce the overall strain of the active region because the high indium mole fraction QWs are compressively strained and the barriers with nitrogen are tensely strained. By adding small amount of antimony, we were able to incorporate up to 46 70 indium. We will present results of high efficiency long wavelength multiple QW GaInNAs ridge-waveguide laser diodes using GaNAs barriers. We will also show GaInNAsSb QWs with GaNAsSb barriers ridge waveguide laser emitting at 1.465 um. We have observed photoluminescence up to 1.6 um with different indium and antimony concentrations. Our GaInNAs and GaInNAsSb ridge waveguide laser diodes have broad emission spectra covering 1.27 um to 1.465 um with pulsed operation up to 90 C. The maximum output power at room temperature, under pulsed operation was 350 mW with a differential efficiency of 0.67 W/A.