Benefits of quantum well intermixing in high power diode lasers

被引：9

作者：

Najda, SP ^{[1
]}

Bacchin, G ^{[1
]}

Qiu, B ^{[1
]}

Liu, X ^{[1
]}

Kowalski, OP ^{[1
]}

Silver, M ^{[1
]}

McDougall, SD ^{[1
]}

Hamilton, CJ ^{[1
]}

Marsh, JH ^{[1
]}

机构：

[1] Intense Photon Ltd, Glasgow G72 0BN, Lanark, Scotland

来源：

NOVEL IN-PLANE SEMICONDUCTOR LASERS III | 2004年 / 5365卷

关键词：

semiconductor diode lasers; GaAs; diode laser arrays; catastrophic optical damage;

D O I：

10.1117/12.530263

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be Lip to similar to20% of giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, the cavity length, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.

引用

页码：1 / 13

页数：13

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