Novel activation process for Mg-implanted GaN

被引：9
|
作者：
Hashimoto, Shin [1 ]
Nakamura, Takao [1 ]
Honda, Yoshio [2 ]
Amano, Hiroshi [2 ]
机构：
[1] Sumitomo Elect Ind Ltd, Itami, Hyogo 6640016, Japan
[2] Nagoya Univ, Akasaki Res Ctr, Dept Elect Engn & Comp Sci, Nagoya, Aichi 4648603, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2014年 / 388卷
关键词：
Doping; Recrystallization; Migration enhanced epitaxy; Nitrides; Semiconducting gallium compounds; YELLOW LUMINESCENCE; GALLIUM VACANCIES; CARBON;
D O I：
10.1016/j.jcrysgro.2013.07.011
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A novel activation process for Mg-implanted GaN was demonstrated. As opposed to the conventional thermal annealing process, an H-2/NH3 alternating supply annealing process achieved better optical activation, stronger near-ullraviolel luminescence and weaker yellow luminescence in the phololuminescence spectroscopy. After this process, small hexagonal hillocks were observed on the surface, which indicated that crystal regrowth was induced by this process, consisting of decomposition of GaN by H-2 supplies and re-crystallization by NH3 supplies. It was revealed that the implanted Mg could easily be located at the activation site by means of crystal regrowth by this process. (C) 2013 Elsevier B.V. All rights reserved
引用
收藏
页码：112 / 115
页数：4
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