A 1.3-μm GaInNAs laser diode with a lifetime of over 1000 hours

被引：88
|
作者：
Kondow, M [1 ]
Kitatani, T [1 ]
Nakahara, K [1 ]
Tanaka, T [1 ]
机构：
[1] Hitachi Ltd, RWCP Optoelect Hitachi Lab, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 12A期
关键词：
1.3-mu m range; GaInNAs; laser diode; reliability; 1000; hours;
D O I：
10.1143/JJAP.38.L1355
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A 1.3-mu m-range GaInNAs/GaAs single-quantum-well laser was tested for 1000 hours at 24 degrees C under an auto-current-control condition. No degradation was observed. The threshold current fell slightly (14%). The lasing wavelength was stable. The lack of rapid degradation under an auto-power-control condition at a high temperature (50 degrees C) suggests that a reliable GaInNAs laser diode with a practical lifetime may soon be realized.
引用
收藏
页码：L1355 / L1356
页数：2
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