1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

被引：6

作者：

Nakao, Ryo ^{[1
,2
]}

Arai, Masakazu ^{[1
,2
]}

Kobayashi, Wataru ^{[1
]}

Yamamoto, Tsuyoshi ^{[1
]}

Matsuo, Shinji ^{[1
,2
]}

机构：

[1] NTT Corp, NTT Device Technol Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, Nanophoton Ctr, Atsugi, Kanagawa 2430198, Japan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2015年 / 21卷 / 06期

关键词：

Diode lasers; metamorphic; quantum well lasers; semiconductor growth; QUANTUM-WELL LASERS; TRANSPORT-PROPERTIES; TERNARY SUBSTRATE; THERMAL-BEHAVIOR; DEGREES-C; GAAS; LAYER; GROWTH;

D O I：

10.1109/JSTQE.2015.2420595

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate a lattice relaxation control by in situ curvature measurement for a metamorphic buffer. Using this relaxation control, we investigated a thin (240 nm) In0.15Ga0.85As metamorphic buffer for fabricating an unstrained In0.10Ga0.90As quasi-substrate on a GaAs substrate and succeeded in fabricating a 1.3-mu m metamorphic InGaAs multiple-quantum well laser diode (LD) on the metamorphic buffer. We confirmed that the LD was directly modulated at 25 Gb/s with a high-characteristic temperature (T-0 = 187 K).

引用

页码：201 / 207

页数：7

共 7 条

[1] 1.3-μm-range InGaAs Metamorphic Laser for Low Power Consumption Operation
Arai, Masakazu
Kobayashi, Wataru
Kohtoku, Masaki
2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC), 2012, : 60 - 61
[2] Demonstration of High Temperature Operation in 1.3-μm-Range Metamorphic InGaAs Laser
Arai, Masakazu
Kondo, Yasuhiro
Kanazawa, Shigeru
Tadokoro, Takashi
Kohtoku, Masaki
2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2012,
[3] 1.3-μm Range Metamorphic InGaAs Laser With High Characteristic Temperature for Low Power Consumption Operation
Arai, Masakazu
Kobayashi, Wataru
Kohtoku, Masaki
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
[4] Uncooled (25-85 °C) 10-Gbps operation of 1.3-μm-range metamorphic InGaAs laser on GaAs substrate
Arai, Masakazu
Tadokoro, Takashi
Kobayashi, Wataru
Fujisawa, Takeshi
Nakashima, Kiichi
Yuda, Masahiro
Kondo, Yasuhiro
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM), 2009, : 226 - 229
[5] Scalar and vectorial approaches to cavity modes of the GaAs-based 1.3-μm oxide-confined edge emitting diode laser
Czyszanowski, Tomasz
Nakwaski, Wlodzimierz
OPTICA APPLICATA, 2007, 37 (03) : 209 - 218
[6] Integrated 1.3-μm DFB laser electroabsorption modulator based on identical MQW double-stack active layer with 25-GHz modulation performance
Stegmueller, B
Hanke, C
IEEE PHOTONICS TECHNOLOGY LETTERS, 2003, 15 (08) : 1029 - 1031
[7] 10-Gb/s Direct Modulation up to 100 °C Using 1.3-μm-Range Metamorphically Grown Strain Compensated InGaAs-GaAs MQW Laser on GaAs Substrate
Arai, Masakazu
Tadokoro, Takashi
Fujisawa, Takeshi
Kobayashi, Wataru
Nakashima, Kiichi
Yuda, Masahiro
Kondo, Yasuhiro
IEEE PHOTONICS TECHNOLOGY LETTERS, 2009, 21 (18) : 1344 - 1346

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