10-Gb/s Direct Modulation up to 100 °C Using 1.3-μm-Range Metamorphically Grown Strain Compensated InGaAs-GaAs MQW Laser on GaAs Substrate

被引：3
|
作者：
Arai, Masakazu [1 ]
Tadokoro, Takashi [1 ]
Fujisawa, Takeshi [1 ]
Kobayashi, Wataru [1 ]
Nakashima, Kiichi [1 ]
Yuda, Masahiro [1 ]
Kondo, Yasuhiro [1 ]
机构：
[1] NTT Corp, NTT Photon Labs, Kanagawa, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2009年 / 21卷 / 18期
关键词：
Direct modulation; heteroepitaxy; metamorphic growth; quasi-InGaAs substrate; uncooled laser; QUANTUM-WELL LASERS; OPERATION;
D O I：
10.1109/LPT.2009.2026488
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have realized 10-Gb/s direct modulation up to 100 degrees C using a metamorphic InGaAs multiple-qunatum well (MQW) laser on a GaAs substrate. The highly strained InGaAs quantum well (QW) and strain-compensated GaAs barrier layer allowed 1.3-mu m-range lasing and an increased number of QWs (six). This laser with a 200-mu m-long short cavity and a narrow ridge had maximum relaxation oscillation frequencies of 13 and 6 GHz at 25 degrees C and 100 degrees C, respectively. A 10-km single-mode fiber error-free transmission was successfully obtained at a temperature of 85 degrees C.
引用
收藏
页码：1344 / 1346
页数：3
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