An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser

被引：26
|
作者：
Hatori, N [1 ]
Mizutani, A [1 ]
Nishiyama, N [1 ]
Matsutani, A [1 ]
Sakaguchi, T [1 ]
Motomura, F [1 ]
Koyama, F [1 ]
Iga, K [1 ]
机构：
[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 226, Japan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 02期
关键词：
carbon doping; delta doping quantum-well lasers; optical interconnects; semiconductor lasers; surface-emitting lasers;
D O I：
10.1109/68.655355
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have fabricated a p-type delta-doped InGaAs-GaAs quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) with a low-resistance GaAs-AlAs distributed Bragg reflector (DBR), The threshold was as low as 700 mu A for 10 x 10 mu m(2) devices, A penalty-free 10-Gb/s transmission experiment with a 100-m-long multimode fiber was performed using fabricated VCSEL's, The modulation speed was up to 12 Gb/s, which was limited by an RC constant, Further threshold reduction and high-speed operation can be expected by controlling the doping concentration in p-type delta-doped layers.
引用
收藏
页码：194 / 196
页数：3
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