CIGS thin film: synthesis and characterization

被引:1
|
作者
Liang, Guangxing [1 ]
Fan, Ping [1 ]
Zheng, Zhuanghao [1 ]
Luo, Jingting [1 ]
Zhang, Dongping [1 ]
Chi, Jingrong [1 ]
Chen, Chaoming [1 ]
Zhao, Jun [1 ]
机构
[1] Shenzhen Univ, Coll Phys Sci & Technol, Inst Thin Film Phys & Applicat, Shenzhen 518060, Peoples R China
来源
关键词
CIGS thin films; Ion-beam sputtering deposition; Evaporation; Microstructure; Optical and electrical properties;
D O I
10.4028/www.scientific.net/AMR.734-737.2480
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu(In, Ga)Se-2 (CIGS) thin film was prepared by ion beam sputtering Cu, In, Se and evaporating Ga elements continuously on BK7 glass substrate and the 4-layer film was then annealed at 400 degrees C for 1h in the same vacuum chamber. The CIGS thin film is single-phase with chalcopyrite structure and has a preferential (112) orientation. Its elemental composition approaches the stochiometric composition ratio of 1:0.7:0.3:2 and it consists of densely packed grain clusters. An energy band gap of about 1.30 eV and an absorption coefficient of 10(5) cm(-1) are obtained. Thus, an optimization of the fabrication for CIGS thin films was achieved.
引用
收藏
页码:2480 / 2483
页数:4
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