CIGS thin film: synthesis and characterization

被引：1

作者：

Liang, Guangxing ^{[1
]}

Fan, Ping ^{[1
]}

Zheng, Zhuanghao ^{[1
]}

Luo, Jingting ^{[1
]}

Zhang, Dongping ^{[1
]}

Chi, Jingrong ^{[1
]}

Chen, Chaoming ^{[1
]}

Zhao, Jun ^{[1
]}

机构：

[1] Shenzhen Univ, Coll Phys Sci & Technol, Inst Thin Film Phys & Applicat, Shenzhen 518060, Peoples R China

来源：

RESOURCES AND SUSTAINABLE DEVELOPMENT, PTS 1-4 | 2013年 / 734-737卷

关键词：

CIGS thin films; Ion-beam sputtering deposition; Evaporation; Microstructure; Optical and electrical properties;

D O I：

10.4028/www.scientific.net/AMR.734-737.2480

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu(In, Ga)Se-2 (CIGS) thin film was prepared by ion beam sputtering Cu, In, Se and evaporating Ga elements continuously on BK7 glass substrate and the 4-layer film was then annealed at 400 degrees C for 1h in the same vacuum chamber. The CIGS thin film is single-phase with chalcopyrite structure and has a preferential (112) orientation. Its elemental composition approaches the stochiometric composition ratio of 1:0.7:0.3:2 and it consists of densely packed grain clusters. An energy band gap of about 1.30 eV and an absorption coefficient of 10(5) cm(-1) are obtained. Thus, an optimization of the fabrication for CIGS thin films was achieved.

引用

页码：2480 / 2483

页数：4

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