Sapphire substrate-bonded ultra-low threshold 850 nm VCSEL array

被引：0

作者：

Liu, JJ ^{[1
]}

Riely, B ^{[1
]}

Shen, P ^{[1
]}

Das, N ^{[1
]}

Newman, P ^{[1
]}

Chang, W ^{[1
]}

Simonis, G ^{[1
]}

机构：

[1] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRL,SE,EM, Adelphi, MD 20783 USA

来源：

2002 DIGEST OF THE LEOS SUMMER TOPICAL MEETINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide-confined vertical-cavity surface-emitting laser (VCSEL) 8x8 arrays were fabricated and off-set flip-chip bonded onto sapphire substrates. These devices were further wire bonded in pin-grid-array (PGA) packages as optical transmitters. Optical output of the top-emitting 850 urn VCSEL array was transmitted through the transparent sapphire substrate. Lasing threshold as low as 24 muA was found from some of these devices at room temperature.

引用

页码：C9 / C10

页数：2

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