PHOTOELECTROCHEMICAL CHARACTERISTICS OF BRUSH ELECTRODEPOSITED CdSexTe1-x THIN FILMS

被引：0
|
作者：
Murali, K. R. [1 ]
Jayasuthaa, B. [2 ]
机构：
[1] Cent Electrochem Res Inst, Electrochem Mat Sci Div, Karaikkudi 630006, Tamil Nadu, India
[2] JJ Coll Engg & Technol, Dept Phys, Tiruchirappalli, India
来源：
CHALCOGENIDE LETTERS | 2009年 / 6卷 / 01期
关键词：
Semiconductor; II-VI; Electronic material; Thin films; OPTICAL-PROPERTIES; DEPOSITION; TEMPERATURE;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
CdSexTe1-x thin films were brush plated on titanium and conducting glass substrates from the precursors at different substrate temperatures in the range of 30 - 80 degrees C. X-ray diffraction studies indicated the films to possess hexagonal structure irrespective of composition. The strain and dislocation density decrease with increase of substrate temperature. The crystallite size increased from 30 - 100 nm as the substrate temperature increased. Optical band gap of the films varied in the range of 1.45 - 1.72 eV. Photoelectrochemical cells were made with the electrodes of different composition. The photo output was nearly equal to earlier reports.
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页码：1 / 8
页数：8
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