Magnetization switching assisted by high-frequency-voltage-induced ferromagnetic resonance

被引：28
|
作者：
Nozaki, Takayuki [1 ,2 ]
Arai, Hiroko [1 ]
Yakushiji, Kay [1 ,2 ]
Tamaru, Shingo [1 ]
Kubota, Hitoshi [1 ,2 ]
Imamura, Hiroshi [1 ]
Fukushima, Akio [1 ,2 ]
Yuasa, Shinji [1 ,2 ]
机构：
[1] Spintron Res Ctr, Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 07期
关键词：
ATOMIC LAYERS;
D O I：
10.7567/APEX.7.073002
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetization switching assisted by high-frequency voltage was demonstrated in magnetic tunnel junctions with perpendicular magnetization. Ferromagnetic resonance was excited by high-frequency voltage instead of by a high-frequency magnetic field. A frequency-dependent reduction, in the switching field (coercive force) was clearly observed with a maximum reduction rate of more than 80% under a radio-frequency power application of 3 dBm. The developed technique can provide a novel approach to energy-assisted magnetization switching with low ohmic dissipation. (C) 2014 The Japan Society of Applied Physics
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页数：4
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