Valence Band Engineering and Polarization Switching in Quantum Dots grown in Inverted Pyramids

被引:0
|
作者
Troncale, Valentina [1 ]
Karlsson, Karl Fredrik [2 ]
Pelucchi, Emanuele [3 ]
Rudra, Alok [1 ]
Dwir, Benjamin [1 ]
Kapon, Eli [1 ]
机构
[1] Ecole Polytech Fed Lausanne, LPN, CH-1015 Ecublens, Switzerland
[2] IFM, Div Sci Mat, S-58183 Linkoping, Sweden
[3] Tyndall Natl Inst, Cork, Ireland
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Control on the degree of valence band mixing is experimentally achieved in the particular GaAs/AlGaAs quantum Dot-in-Dot (DiD) structure. The effect is reflected by the tunable polarization of the emitted photons.
引用
收藏
页码:100 / +
页数:2
相关论文
共 50 条
  • [41] "Extremum Loop" Model for the Valence-Band Spectrum of a HgTe/HgCdTe Quantum Well with an Inverted Band Structure in the Semimetallic Phase
    Gudina, S. V.
    Bogolyubskii, A. S.
    Neverov, V. N.
    Shelushinina, N. G.
    Yakunin, M. V.
    SEMICONDUCTORS, 2018, 52 (11) : 1403 - 1406
  • [42] The size-dependent valence and conduction band-edge energies of Cu quantum dots
    Matsui, Takahiro
    Watanabe, Hiroto
    Somekawa, Shoichi
    Yanagida, Sayaka
    Oaki, Yuya
    Imai, Hiroaki
    CHEMICAL COMMUNICATIONS, 2024, 60 (33) : 4419 - 4422
  • [43] Influence of valence band spin-orbit coupling on the entanglement of excitons in coupled quantum dots
    Climente, J. I.
    Korkusinski, M.
    Goldoni, G.
    Hawrylak, P.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 1862 - 1864
  • [44] Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing
    Harbord, Edmund
    Ota, Yasutomo
    Igarashi, Yuichi
    Shirane, Masayuki
    Kumagai, Naoto
    Ohkouchi, Shunsuke
    Iwamoto, Satoshi
    Yorozu, Shinichi
    Arakawa, Yasuhiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (12)
  • [45] Quaternary quantum dots with gradient valence band for all-inorganic perovskite solar cells
    Li, Feng
    Wei, Jiahu
    Liao, Guoqing
    Guo, Chenyang
    Huang, Yan
    Zhang, Qin
    Jin, Xiao
    Jiang, Shuiqing
    Tang, Qunwei
    Li, Qinghua
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2019, 549 : 33 - 41
  • [46] Spectra Stable Quantum Dots Enabled by Band Engineering for Boosting Electroluminescence in Devices
    Lyu, Bingbing
    Hu, Junxia
    Chen, Yani
    Ma, Zhiwei
    MICROMACHINES, 2022, 13 (08)
  • [47] Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots
    Lin, Kuo-Feng
    Cheng, Hsin-Ming
    Hsu, -Cheng Hsu
    Hsieh, Wen-Feng
    APPLIED PHYSICS LETTERS, 2006, 88 (26)
  • [48] Valence band structure engineering of thin SiGe/Si quantum wells for piezoresistive applications
    Reparaz, J. S.
    Goni, A. R.
    Alonso, M. I.
    Garriga, M.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2013, 250 (04): : 760 - 764
  • [49] Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates
    Fabian, G.
    Makk, P.
    Madsen, M. H.
    Nygard, J.
    Schonenberger, C.
    Baumgartner, A.
    PHYSICAL REVIEW B, 2016, 94 (19)
  • [50] Manipulation of dynamic nuclear spin polarization in single quantum dots by photonic environment engineering
    Fong, C. F.
    Ota, Y.
    Iwamoto, S.
    Arakawa, Y.
    PHYSICAL REVIEW B, 2017, 95 (24)