Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

被引：9

作者：

Harbord, Edmund ^{[1
]}

Ota, Yasutomo ^{[1
]}

Igarashi, Yuichi ^{[1
,2
]}

Shirane, Masayuki ^{[1
,2
]}

Kumagai, Naoto ^{[1
]}

Ohkouchi, Shunsuke ^{[1
]}

Iwamoto, Satoshi ^{[1
,3
]}

Yorozu, Shinichi ^{[1
,2
]}

Arakawa, Yasuhiko ^{[1
,3
]}

机构：

[1] Univ Tokyo, Inst Quantum Nano Informat Elect, Meguro Ku, Tokyo 1538505, Japan

[2] NEC Corp Ltd, Smart Energy Res Labs, Tsukuba, Ibaraki 3058501, Japan

[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 12期

基金：

日本学术振兴会;

关键词：

FINE-STRUCTURE;

D O I：

10.7567/JJAP.52.125001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We measure polarization resolved photoluminescence from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) over a wide range of energies in two samples: one as-grown, the other subjected to rapid thermal annealing (RTA). thing the linear polarization of the X+ emission as a probe of the valence band mixing (VBM), we find that RTA enhances QD VBM, attributed to the increase in QD height. We complement our measurements with 8-band k . p calculations, which suggest the increase in height on annealing is responsible for this enhancement. (C) 2013 The Japan Society of Applied Physics

引用

页数：8

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