Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots

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作者
Dandan Ning [1 ,2 ]
Yanan Chen [2 ,3 ]
Xinkun Li [4 ]
Dechun Liang [4 ]
Shufang Ma [1 ]
Peng Jin [2 ,3 ]
Zhanguo Wang [2 ,3 ]
机构
[1] Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology
[2] Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices,Institute of Semiconductors, Chinese Academy of Sciences
[3] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences
[4] Beijing Institute of Aerospace Control
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摘要
Photoluminescence(PL) test was conducted to investigate the effect of rapid thermal annealing(RTA) on the optical performance of self-assembled InAs/GaAs quantum dots(QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with the as-grown InAs QDs sample, the PL spectral width has increased by 44.68 meV in the InAs QDs sample RTA-treated at 800 ℃. The excitation power-dependent PL measurements showed that the broadening of the PL peaks of the RTA-treated InAs QDs should be related to the emission of the ground state(GS) of different-sized InAs QDs, the InAs wetting layer(WL)and the In0.15 Ga0.85 As strain reduction layer(SRL) in the epitaxial InAs/GaAs layers.
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