Long-wavelength quantum-dot lasers

被引：5
|
作者：
Grundmann, M
Ledentsov, NN
Hopfer, F
Heinrichsdorff, F
Guffarth, F
Bimberg, D
Ustinov, VM
Zhukov, AE
Kovsh, AR
Maximov, MV
Musikhin, YG
Alferov, ZI
Lott, JA
Zhakharov, ND
Werner, P
机构：
[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] USAF, Inst Technol, Wright Patterson AFB, OH 45433 USA
[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2002年 / 13卷 / 11期
关键词：
D O I：
10.1023/A:1020610109933
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy(MBE)for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (greater than or equal to 80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. (C) 2002 Kluwer Academic Publishers.
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页码：643 / 647
页数：5
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