Long-wavelength quantum-dot lasers

被引：5

作者：

Grundmann, M

Ledentsov, NN

Hopfer, F

Heinrichsdorff, F

Guffarth, F

Bimberg, D

Ustinov, VM

Zhukov, AE

Kovsh, AR

Maximov, MV

Musikhin, YG

Alferov, ZI

Lott, JA

Zhakharov, ND

Werner, P

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] USAF, Inst Technol, Wright Patterson AFB, OH 45433 USA

[4] Max Planck Inst Mikrostrukturphys, D-06120 Halle Saale, Germany

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2002年 / 13卷 / 11期

关键词：

D O I：

10.1023/A:1020610109933

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum dots (QD) of (InGaAs/GaAs) on GaAs substrate with long-wavelength emission (1300 nm) have been fabricated using metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy(MBE)for use in surface-emitting laser diodes. QDs are obtained by employing two different approaches, seeding and overgrowth with a quantum well, yielding similar recombination spectra. Despite the shift to long wavelengths, a large separation (greater than or equal to 80 meV) between excited states is maintained. The introduction of such QDs into a vertical cavity leads to a strong narrowing of the emission spectrum. Lasing from 1300-nm QD VCSEL is reported. (C) 2002 Kluwer Academic Publishers.

引用

页码：643 / 647

页数：5

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