Field effect transistor as detector of THz radiation helicity

被引：0
|
作者：
Romanov, K. S. [1 ]
Dyakonova, N. [1 ]
But, D. B. [1 ]
Teppe, F. [1 ]
Knap, W. [1 ]
Dyakonov, M. I. [1 ]
Drexler, C. [2 ]
Olbrich, P. [2 ]
Karch, J. [2 ]
Schafberger, M. [2 ]
Ganichev, S. [2 ]
Mityagin, Yu [3 ]
Klimenko, O. [3 ]
机构：
[1] Univ Montpellier 2, CNRS, Lab Charles Coulomb, Montpellier, France
[2] Univ Regensburg, Terahertz Ctr, Regensburg, Germany
[3] Lebedev Phys Inst, Moscow, Russia
来源：
TERAHERTZ EMITTERS, RECEIVERS, AND APPLICATIONS IV | 2013年 / 8846卷
关键词：
D O I：
10.1117/12.2022264
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We use two antenna model to develop a theory of the recently observed helicity-sensitive detection of terahertz radiation by FETs. The effect is due to the mixing of the ac signals produced in the channel by the two antennas. We obtain the helicity-dependent part of the photoresponse and its dependence on the antenna impedance, gate length, and gate voltage.
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页数：9
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