Graphene film synthesis on SiGe semiconductor substrate for field-effect transistor

被引：0

作者：

Chen, Da ^{[1
,2
]}

Wang, Gang ^{[1
,2
]}

Li, Jinhua ^{[3
]}

Guo, Qinglei ^{[2
]}

Ye, Lin ^{[1
,2
]}

Zhou, Huaijuan ^{[3
]}

Zheng, Li ^{[2
]}

Zhang, Miao ^{[2
]}

Liu, Su ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

MATERIALS LETTERS | 2014年 / 135卷

基金：

中国国家自然科学基金;

关键词：

Graphene; Raman; Electrical properties; Semiconductors;

D O I：

10.1016/j.matlet.2014.07.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We demonstrate that the single-layer graphene film can be directly grown on semiconductor SiGe substrate by using ambient pressure chemical vapor deposition. It is apparent that SiGe has a very strong catalytic ability for direct fabrication of high-quality graphene film. In comparison with various transition metal-based catalysts, this strategy can utilize the standard equipment available in semiconductor technology which is of maturity and is scalable. The crystallinity and thickness were investigated using Raman spectroscopy, scanning tunneling microscopy and transmission electron microscopy. The field-effect transistors were fabricated and characterized to determine the electrical properties of the synthesized graphene film. Moreover, this formation method of graphene-on-SiGe junction enables us to fabricate electronic devices based on this structure in microelectronics and optoelectronics. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：222 / 225

页数：4

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