Cu/Sn SLID Wafer-level Bonding Optimization

被引：0
|
作者：
Thi-Thuy Luu [1 ]
Duan, Ani [1 ]
Wang, Kaiying [1 ]
Aasmundtveit, Knut [1 ]
Hoivik, Nils [1 ]
机构：
[1] Vestfold Univ Coll, Dept Micro & Nano Technol, N-3184 Borre, Norway
来源：
2013 IEEE 63RD ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2013年
关键词：
THICKNESS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The objective of this study is to optimize the Cu/Sn solid liquid bonding process, which is an attractive technique for wafer-level MEMS packaging and encapsulation. In order to optimize the bonding process, the effect of bonding temperature profile, initial Sn layer thickness and bond pressure are investigated and discussed. Bond performance is characterized by sealing yield, dicing yield and cross section analysis of the bond interface. With correct design of Cu/Sn layer thickness and temperature profile, high bond yield at bond temperature 270 degrees C and 250 degrees C was obtained.
引用
收藏
页码：1531 / 1537
页数：7
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