The photoluminescence from (Eu, Yb) co-doped silicon-rich Si oxides

被引：2

作者：

Heng, Chenglin ^{[1
,2
]}

Su, Wenyong ^{[1
,2
]}

Zhang, Qiwei ^{[1
,2
]}

Ren, Xiaoqian ^{[3
]}

Yin, Penggan ^{[3
]}

Pan, Huiping ^{[4
]}

Yao, Shude ^{[4
]}

Finstad, Terje G. ^{[5
]}

机构：

[1] Beijing Inst Technol, Minist Educ, Key Lab Cluster Sci, Beijing 100081, Peoples R China

[2] Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China

[3] Beihang Univ, Sch Chem & Environm, Minist Educ, Key Lab Bioinspired Smart Interfacial Sci & Techn, Beijing 100191, Peoples R China

[4] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[5] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

来源：

JOURNAL OF LUMINESCENCE | 2014年 / 154卷

关键词：

Silicon rich oxide; Luminescence; Eu; Yb; Rare earth compounds; Energy transfer; SOLAR-CELLS; LUMINESCENCE; GLASSES;

D O I：

10.1016/j.jlumin.2014.04.035

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped siliconrich oxide films with different Si excess and after various annealings. The dominating PL signal of Eu changed gradually from that of Eu3+ ions to Eu2+ by raising the annealing temperature from 700 to 1200 degrees C. Transmission electron microscopy revealed that amorphous Eu, Yb, Si, O containing precipitates have been formed in the Si-rich oxide during 1000-1200 degrees C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence. The variation of PL intensity from Yb3+ ions with annealing in N-2, was correlated with the PL intensity from Eu. The PL of films can be altered considerably by oxidizing at different temperatures, which is discussed in terms of defects in the host oxide and excitation energy transfer. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：339 / 344

页数：6

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