Semiconductor excitons in strong terahertz fields

被引：1
|
作者：
Steiner, J. T. [1 ]
Kira, M. [1 ]
Koch, S. W. [1 ]
机构：
[1] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 2 | 2009年 / 6卷 / 02期
关键词：
D O I：
10.1002/pssc.200880320
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A microscopic theory for the nonlinear terahertz response of excited semiconductor systems is presented. It is shown that the measurable quantities in typical terahertz transmission/reflection experiments contain large ponderomotive contributions which mask the signatures from terahertz-induced many-body transitions. A scheme is developed to remove the ponderomotive contributions and applied to isolate the signatures of Rabi oscillations of an exciton population. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：504 / +
页数：2
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