Lateral spatial switching of excitons using vertical electric fields in semiconductor quantum rings

被引：4
|
作者：
McDonald, P. G. [1 ]
Shumway, J. [2 ]
Galbraith, I. [1 ]
机构：
[1] Heriot Watt Univ, SUPA, Sch Engn & Phys Sci, Dept Phys, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Arizona State Univ, Dept Phys & Astron, Tempe, AZ 85287 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 17期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1063/1.3504230
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We study the response of exciton complexes in semiconductor quantum rings to vertical electric fields, using path integral quantum Monte Carlo simulations. The interaction of a vertical applied field and the piezoelectric fields of the ring with correlated excitonic complexes switches excitons between two different lateral locations within the ring. This control should be observable through polarizability and dipole measurements, and, for biexcitons, an energy shift beyond the normal Stark shift. (C) 2010 American Institute of Physics. [doi:10.1063/1.3504230]
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页数：3
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